| 摘要 |
<p>PURPOSE:To prevent the damage of a wafer caused by the dielectric breakdown of an electrostatic chuck by a method wherein a non-grounded type power supply is used as a DC power supply, thereby floating the potential of the electrostatic chuck higher than ground potential. CONSTITUTION:A semiconductor manufacturing equipment is provided with the following: a grounded type high frequency power supply 5 applying a high frequency voltage to a pair of reaction electrodes 1, 2 in a process chamber 3, and a DC power supply applying a DC high voltage to an electrostatic chuck 4 in the process chamber 3. As the DC power supply of the above semiconductor manufacturing equipment, a non-grounded type DC power supply 6a is used, and the potential of the electrostatic chuck 4 is floated from ground potential. Thereby an excessive voltage can be prevented from being applied between the high frequency electrode 5 and electrodes 4a, 4b in the electrostatic chuck, so that the problem of dielectric breakdown is resolved, and the damage of a wafer caused by the dielectric breakdown is surely prevented.</p> |
