| 摘要 |
<p>PURPOSE:To obtain a gain characteristic flat over a wide range by splitting a FET into plural FET cells of parallel connection and providing a feedback circuit between the FET cells. CONSTITUTION:A field effect transistor(TR) is split into two FET cells 9 symmetrical to each other and arranged, and a feedback circuit 8 comprising a resistor 5, a capacitor 6 and a connection distributed constant line 7 whose one terminal connect to a drain terminal 3 of the FET and whose other terminal connects to a gate terminal 2 is provided between the two FET cells 9. Even when the feedback circuit 8 is employed for an amplifier using the FET with a wide gate width, the length of the connection distributed constant line of the feedback circuit 8 is sufficiently decreased. Thus, the gain characteristic flat over a wide band is obtained.</p> |
