发明名称 Method of treating semiconductor wafers in a magnetically confined plasma at low pressure by monitoring peak to peak voltage of the plasma
摘要 In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.
申请公布号 US4960610(A) 申请公布日期 1990.10.02
申请号 US19890434197 申请日期 1989.11.13
申请人 TEGAL CORPORATION 发明人 KROGH, OLE
分类号 H01J37/32 主分类号 H01J37/32
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