| 摘要 |
PURPOSE: To realize a smooth metallization through an electroless metallization bath by making a contact hole through plasma etching and then performing preprocessing at 40 deg.C and 95 deg.C using an aqueous solution for forming nucleus containing HF. and a specified quantity of palladium salt. CONSTITUTION: A contact hole 5 is made through plasma etching and then preprocessing is performed at 40 deg.C and 95 deg.C using an aqueous solution for forming nucleus containing HF and a palladium salt of 5×10<-4> -0.14mol/l. Consequently, mutiple nuclei 6 of Pd can be formed at high rate and grown slowly. A conventional electroless bath being used for an alloy of other metal e.g. nickel, cobalt, gold, palladium, copper or tungsten, can be employed in a following metallization step and a metal plug 7 having an appropriate adhesion is formed during that process. Consequently, a contact hole on a silicon substrate can be metallized appropriately.
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