| 摘要 |
A semiconductor laser comprises an active layer of a quantum well structure, and a current confinement structure for avoiding the injection of carriers into regions of the active layer in the vicinities of resonator facets. The current confinement structure is different in conduction type from that of one of cladding layer, and is formed by a semiconductor layer which is transparent for a laser light. The semiconductor laser further comprises an optical waveguide structure provided between the resonator facets. In this semiconductor laser, the catastrophic damage is avoided, and the high output power is obtained.
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