发明名称 COMPLEX STRUCTURE
摘要 PURPOSE: To perform a high energy utility by executing a thin transparent film of a metal oxide on a metal film and incorporating closed fine pores adjacent to the metal film distributed on a surface of the oxide film in the oxide film. CONSTITUTION: A minimum thickness of a metal film is decided according to a critical percolation mainly remarkably rising at its electric impedance. A minimum value of the film thickness is 1.0 nm, and a maximum value is dependent upon a desired transparency, and this value is preferably as large as at least 50 nm. A thickness of an oxide film mainly dependent upon an initial thickness of the metal film. A thickness of the oxide film is, for example, 10 nm to 50 μm. A diameter of a pore of the metal oxide film is mainly dependent upon conditions during an electrolysis or an electrolyte to be used. Its diameter is, for example, 2 to 500 nm. The pores are closed adjacent to the metal film. During the electrolysis, a thin shield layer having a thickness of preferably several nm is formed between the metal film and a multiporous metal oxide film to isolate the two layers. A thickness of the shield layer is mainly dependent upon a voltage to be applied, and its thickness is, for example, 1 to 100 nm or preferably 5 to 50 nm.
申请公布号 JPH02245328(A) 申请公布日期 1990.10.01
申请号 JP19900012759 申请日期 1990.01.24
申请人 CIBA GEIGY AG 发明人 BEATO SHIYUMITSUTOHARUTAA;HAINTSU SUPAANI
分类号 B41M5/26;B32B5/18;B32B7/02;B32B9/00;B32B17/06;B41M5/24;C03C17/36;C25D11/02;C25D11/22;G01D15/34;G11B7/24;G11B7/243;H01L31/18;H05B33/28 主分类号 B41M5/26
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