SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PURPOSE:To obtain a good-quality crystal whose defect is extremely small by a method wherein a crystal which is lattice-matched to a substrate is grown epitaxially on the substrate. CONSTITUTION:An undoped ZnSSe active layer 8 and a nitrogen-doped p-type ZnSSeTe clad layer 9 are composed of an epitaxially grown semiconductor crystal layer which is lattice-matched to a substrate. A composition of the ZnSSeTe clad layer is selected in such a way that a band-gap energy difference between the clad layer and the active layer becomes large. An overflow of carriers is not caused when an electric current is injected when the band-gap energy difference between the active layer and the clad layer is larger. As a result, a large electric current can be injected; it is possible to obtain a semiconductor light-emitting element which emits light of a wide wavelength region from a visible region to an ultraviolet region.