发明名称 ETALON FOR EXCIMER LASER APPARATUS
摘要 PURPOSE:To prevent a drop in a function by heat generated when light is confined by a method wherein an area of a highly reflecting film of an etalon is constituted to be smaller than an area of a substrate on which the highly reflecting film has been formed. CONSTITUTION:A highly reflecting film 5 composed of a dielectric multilayer film is formed in such a way that it is larger than a passage cross-sectional area of a laser beam and is 60% or lower of an area of a substrate 1. When this etalon is used in an excimer laser apparatus, the highly reflecting film 5 is 60% or lower of a film formation face of the substrate 1 and is not formed in an outer periphery part, a reflectivity at the outer periphery face becomes small and light is quickly discharged to the outside of a system without being confined. That is to say, heat generated by inessential light and a thermal strain by it are reduced. In addition, since the film area is small, a strain by a stress at the inside of the film can be reduced as a whole.
申请公布号 JPH02246179(A) 申请公布日期 1990.10.01
申请号 JP19890066918 申请日期 1989.03.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 MINAGAWA TADAO
分类号 H01S3/106;H01S3/137 主分类号 H01S3/106
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