| 摘要 |
PURPOSE:To obtain a highly integrated semiconductor integrated circuit operating at high speed and at low energy consumption by using a transistor (TR) at a low threshold voltage for a circuit with the low voltage amplitude out of the circuits having the plural voltage amplitudes. CONSTITUTION:When the voltage of a word line W0 is set from VSS (0V) to VDH (1.5V), information accumulated in an accumulated capacitor CS is read to a data line D. Next, when a P1P is set from VDL (1.0V) to the VSS (0V) and a P1N is set from the VSS (0V) to the VDL (1.0V), sense amplifier driving TRs QP and QN are turned on, and a sense amplifier driving line CSP is changed from HVC (0.5V) to the VDL (1.0V), and a CSN is changed from the HVC (0.5V) to the VSS (0V). At such a time, since the sense amplifier uses TRs Q1' to Q4' at the low threshold voltage, the voltage between a gate and a source sufficiently exceeds the threshold voltage, the TR of the sense amplifier is sufficiently turned on, and the signal voltage of the data line can be sufficiently amplified. Thus the high-speed operation and energy consumption reduction are attained. |
