发明名称 ECLEPROM EQUIPPED WITH CMOS WRITE
摘要 <p>PURPOSE: To make writing easy and to shorten an access time by separating a writing path from a reading path. CONSTITUTION: Two parallel paths are provided for a memory cell 26, and the memory cell 26 can receive a reading signal and a writing signal independently. ECL parts are used for reading a cell in a reading path, on the other hand MOS parts are used for reading and verifying a cell in a writing path. The memory cell 26 includes a MOS memory element, a ECL path element, and a sense element coupling the MOS memory element to the ECL path element. This MOS memory element is coupled to the writing path, the, ECL path element is coupled to a reading path provided with a bipolar output transistor. Thereby, a shortened access time of 4-5ns can be obtained.</p>
申请公布号 JPH02246096(A) 申请公布日期 1990.10.01
申请号 JP19890329787 申请日期 1989.12.21
申请人 NATL SEMICONDUCTOR CORP <NS> 发明人 DAGURASU DEI SUMISU;ROBAATO EI KAATEISU;TERANSU ERU BOOMAN
分类号 G11C17/18;G11C16/04;G11C16/10;G11C16/26;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 主分类号 G11C17/18
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