| 摘要 |
PURPOSE:To make a memory cell area small by constituting two memory cells so as to sandwich a cell plate electrode. CONSTITUTION:A first memory cell capacitor is constituted of an insulating film 18 which has been formed between a cell plate electrode 16 and a charge storage part 17 as a source part of a first memory cell. A charge storage part 22 of a second memory cell connected to a source part 21 is formed at the upper part of an insulating film 23 constituting a second memory cell capacitor formed at the upper part of the cell plate electrode 16. Since the charge storage parts 17, 22 of the first and second memory cell capacitors are formed at the upper nad lower parts so as to sandwich the cell plate electrode 16, it is possible to secure a definite capacity value in an area which is small as compared with conventional memory cells; a chip size can be made smell. |
