发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To reduce energy consumption, and to easily obtain a circuit at a high density in low costs by turning on one of two MOSFETs, and turning off the other one, and turning on at least one of the two MOSFETs when a driving pulse is at an L level. CONSTITUTION:The all MOSFETs in unit bits are composed in the same n type or p type. By the operation of a switching circuit SW, during the operation of a feeding register, one of the two MOSFETs M1 and M2 connected between the power source of a driving pulse phim and the L level power source is turned on and the other is turned off, or the both are turned on and the driving pulse phim is set at the L level mode. When the MOSFETs are always set in the above mentioned modes, a current does not flow through a route from the MOSFET M1 to the MOSFET M2, and the stationary current does not flow in such an operation. Thus the energy consumption can be reduced, the costs are reduced and the circuit can be set at the high density.
申请公布号 JPH02246097(A) 申请公布日期 1990.10.01
申请号 JP19890067108 申请日期 1989.03.17
申请人 FUJITSU LTD 发明人 KUBO KAZUYA;ITO YUICHIRO
分类号 G11C19/28;G11C19/00 主分类号 G11C19/28
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