| 摘要 |
<p>PURPOSE:To offer an optical semiconductor device with a large degree of freedom for optical-system selection by forming a two-layer structure where a multi-split photodiode is formed at an upper-layer part and a unidimensional light-spot position detection element is formed at a lower-layer part. CONSTITUTION:A semiconductor substrate is used for an n-type high-resistance region 24; phosphorus is diffused to its rear; an n<+> region 25 is formed. Then, boron ions are implanted into the surface of the substrate as a photodetecting face of a light-spot position detection element; a p-type high-resistance region 26 is formed. In succession, boron is diffused to both ends of the p-type high- resistance region 26 in order to form an anode electrode. In this manner, a unidimensional light-spot position detection element at a lower-layer part is formed; after that, an epitaxial growth operation is executed; an n-type semiconductor region 29 is grown. Then, two photodiodes 30 and 31 of a p-n junction are formed in the central part on the surface of the n-type semiconductor region 29; a two-split photodiode at an upper-layer part is constituted.</p> |
