| 摘要 |
A semiconductor device is produced by depositing a Cu alloy film on a Si substrate (10,12); patterning the alloy film; annealing (600-900 deg.C) the patterned alloy film, in a nitrogen containing atmos. at reduced pressure, so that a Cu interconnecting film (18) covered by a nitride film (16) is formed. Pref. the Cu is alloyed with less than 20% (wt.) of one element from the gp. Ti, Zr, Al, B and Si, and the nitrogen atmos. also includes either Ar or NH3. A novel method of producing semiconductor devices in which oxidn. of a Cu metallisation layer is suppressed, and low resistance maintained. |
