| 摘要 |
The pair of isolating grooves (9) extend through the silicon epitaxial layer (3), into a collector buried layer (2) and through to the substrate. In a bipolar large scale integration there are two thick oxide layers (12,15) and two silicon nitride layers (as 13) formed in an interdevice isolation area. In the course of manufacture, a silicon nitride film (13) is formed on the entire surface and a thick poly-silicon layer (14) is formed to fill the grooves. The poly-silicon film is then etched until the surface of the nitride film is exposed, to flatten the surface. A silicon dioxide film (15) is then formed with a thickness of about four hundred nanometres and the exposed nitride areas are removed.
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