| 摘要 |
PURPOSE:To prevent faults due to charge-up of a semiconductor device even if a wiring is cut off or is connected by an ion beam by forming at least two or one pn junction near a wiring which is to be cut off or connected by an ion beam and then by connecting it with the wiring electrically. CONSTITUTION:By forming n-type regions 12-1 and 12-2 within a p-type silicon substrate 11, a pn junction can be formed between the n-type regions 12-1 and 12-2 and the p-type silicon substrate 11 with a certain gap. Then, an insulation film 14 is formed. Then, a contact hole 16 is opened for the n-type regions 12-1 and 12-2 through this insulation film 14. Then, a wiring 13, for example, of aluminum is formed through a contact hole 16 so that it may be connected to the n-type regions 12-1 and 12-2. Then, an insulation film 15 is formed on the wiring 13 where this fuse is provided. |
