| 摘要 |
PURPOSE:To realize an element which is low in cost, large in area, and excellent in performance by a method wherein a P-type semiconductor is formed of specific organic compound formed through an electrolytic polymerization method. CONSTITUTION:Poly (N,N'-diphenyl benzidine) formed through an electrolytic polymerization method is used as a P-type semiconductor, and a photoelectric conversion element is formed of the semiconductor concerned. This poly (N,N'- diphenyl benzidine) grows to be a uniform, tough film, whose thickness is controllable within a range of 100Angstrom to tens of mums through the quantity of operating charge and which has no pinhole even though it is formed into a thin film. For instance, a lower electrode 3 is provided onto a support 5, a P-type semiconductor layer 1 of poly (N,N'-diphenyl benzidine) is formed thereon, and an N-type semiconductor layer 2 and an upper electrode 4 are formed thereon to form a photoelectric conversion element, where the layers 1 and 2 are sandwiched between the electrodes. An element as formed above can have a stable performance that a higher release voltage is realized as compared with a conventional one. |
