| 摘要 |
PURPOSE: To activate hetero-epitaxial growth and an implantation part by a method wherein, in a cap layer on a hetero-epitaxial layer of a second material, the second material is balanced with lattice, and in the upmost layer of a third material on the cap layer, the cap layer is balanced with lattice. CONSTITUTION: A hetero-epitaxial structure 100 contains a silicon substrate 102, a GaAs buffer layer 104, an Alx Ga1-x As layer 106, an AlAs layer 108 and a GaAs layer 110. An active device like MOSFET 112 and JFET can be manufactured in the GaAs layer 110, or can be grown so as to contain both of heterojunction bipolar and MOS manufactured in the layer 110 together with the layer 110 and GaAs and Alx Ga1-x As layer.
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