| 摘要 |
PURPOSE:To achieve refinement and high degree integration for a device by providing four transistors and two high value resistors and constructing the resistors from a plurality of laminated polycrystalline silicon films with insulating films being interposed therebetween and the polycrystalline silicon films being electrically conductively connected in series at one position. CONSTITUTION:A semiconductor memory comprises a pair of driver transistors QD whose gates and drains are cross-connected, high value resistors RL connected respectively to the drains of the driver transistors, a pair of transfer gate transistors QTG connected respectively to the junction points between the driver transistors and the high value resistors, and a positive side and an earth side power supply lines between which a pair of series circuits, each consisting of the driver transistor and the high value resistor, are connected. The high value resistor is constructed from a plurality of laminating polycrystalline silicon films (such as polycrystalline silicon films 7, 9, 11) with insulating films (such as interlayer insulating films 8, 10) being interposed therebetween and the polycrystalline silicon films being electrically conductivity connected in series at one position. |
