| 摘要 |
PURPOSE:To attain rapid switching by photocoupling a photodiode array with a light emitting diode and supplying a gate current from the load side to an output MOSFET to which the photoelectromotive force of the photodiode array is impressed between the gate and source through a transistor(TR) to be driven by the optical current of the photodiode array. CONSTITUTION:The light emitting diode 1 is photocoupled with the photodiode array 2 and the positive and negative poles of the array 2 are respectively connected to the base of a TR 6 connected between the drain and gate of the output MOSFET 3 and the gate of a control TR 4 connected between the gate and source of the MOSFET 3. When an input signal is impressed to the diode 1, the TR 6 is turned to a conductive state by an optical current generated by the array 2, a gate current is allowed to flow from the negative side to the gate of the MOSFET 3 and the gate capacity can be rapidly charged. Thus, rapid switching can be attained. |
