| 摘要 |
PURPOSE:To obtain a single crystal, which has a high N-type carrier concentration and has good quality, by a method wherein a heat treatment is performed in a state that an element selected from among groups consisting of group III elements or group VII elements is mixed into zinc selenoide powder as an impurity. CONSTITUTION:A mixture of compounds consisting of group III elements, such as Al, indium and the like, or group VII elements, such as chlorine, bromine, iodine and the like, is mixed with zinc selenide powder 3. This mixture is put in an ampul 5 made of quartz to heat-treat and after a seed crystal 4 is set, iodine 2 is put in an arm part 7, the ampul is evacuated to reach a vacuum state by a pump 1 and the arm part is sealed above the part 7. Then, after the iodine 2 is warmed and is transported to the ampul part 5, the ampul part is sealed above the seed crystal 4 and a single crystal of zinc selenide is grown on the seed crystal 4 in an electric furnace. Then, this single crystal is heat- treated together with zinc in a vacuum. Thereby, a single crystal having a high N-type carrier concentration is obtained and a high-efficiency blue light- emitting element can be formed. |
