| 摘要 |
PURPOSE:To form single crystal at low temperature, to efficiently add an impurity and to grow single crystal having excellent controllability and stability of electrical properties and optical properties by irradiating a semiconductor with light rays to resonate or absorb in energy of band gap and decomposing and reacting molecular beam raw materials of compound material and impurity material on a substrate of semiconductor. CONSTITUTION:In growing single crystal of compound semiconductor on a substrate of semiconductor by irradiating a molecular beam or atomic beam raw materials containing a simple substance material of element constituting a specific semiconductor and an impurity element of the compound semiconductor with light rays, the raw material is irradiated with light rays having specific optical energy, especially light rays to resonate or absorb in energy of band gap for the whole time of growth, light decomposition, optical migration, optical bonding, photodissociation, etc., are carried out to effect epitaxial growth of single crystal of compound semiconductor having desired conduction type.
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