| 摘要 |
<p>Semiconductor device is prepd. by chemical vapour deposition of amorphous Si on a substrate by a method in which the substrate e.g. of glass is coated in an atmos. of SiH4 at high freq. of less than 1 MHz, pref. 30-500 KHz, partic. 200 KHz under a pressure of 1 torr and power of 100 mW/cm2. The supply of SiH4 is stopped after a predetermined thickness, generally 1 mu, has been produced and O2 is supplied to form a plasma, with a wave of 30 KHz to 13.56 MHz, irradiating the deposit for a period of 30-40 minutes.</p> |
