| 摘要 |
PURPOSE:To facilitate dry patterning of a resist film, by using a photosensitive resist consisting of a mixture of a photosensitive resin and a silylating or acylating agent. CONSTITUTION:A photosensitive resist layer 13 composed of a radiation-sensitive resin, such as polyacrylate, and a silylating or acylating agent is formed on the heat-oxidized film of silicon 12 provided on a semiconductor substrate 11. The resist film 13 is irradiated with electron beams 14 in accordance with a prescribed pattern. The substrate 11 is set in an etching tunnel 16, and exposed to oxygen plasma to remove the parts of the film 13 not exposed to the electron beams 14, thus permitting a resist film pattern 13a to be formed. The unnecessary parts of the film 12 are removed by ion etching using the pattern 13a as a protective film, and further, the pattern 13a is removed, thus permitting the film 12 to be patterned. |
