发明名称 |
Refractory metal silicide cap for protecting multi-layer polycide structure. |
摘要 |
<p>A process for forming a capping layer over a titanium silicide layer includes forming a layer of polysilicon (16) over a gate-oxide layer (14). A layer of titanium (18) is then formed over the poly layer (16) followed by deposition of a composite layer of tantalum silicide (20). The structure is then patterned and subjected to an annealing process to form a titanium silicide layer (22) covered by the capping layer (20) of tantalum silicide. The tantalum silicide provides a much higher oxidation resistant layer with the underlying titanium silicide providing the desirable conductive properties needed for long runs of interconnects on a semiconductor structure.</p> |
申请公布号 |
EP0388565(A1) |
申请公布日期 |
1990.09.26 |
申请号 |
EP19890400830 |
申请日期 |
1989.03.24 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. (A DELAWARE CORP.) |
发明人 |
MILLER, ROBERT OTIS;LIOU, FU-TAI |
分类号 |
H01L21/28;H01L21/285;H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|