HETERO-EPITAXIAL LIQUID PHASE GROWTH METHOD AND APPARATUS THEREFOR

摘要

A hetero-epitaxial liquid phase growth method for growing a compound semiconductor by liquid phase epitaxy includes placing a melt in a closed melt boat on a substrate and epitaxially growing a first thin film, opening the melt boat while the melt remains in a melted state for a predetermined time to evaporate a component of the melt, and epitaxially growing a second thin film on the first thin film from the melt from which the component has been evaporated.