| 摘要 |
PURPOSE:To perform continuous sputtering treatment of substrates without contaminating the inside of a vacuum chamber while enabling monitoring of a sputtering condition in the stage of subjecting the many substrates to a sputtering treatment by using cylindrical deposition preventing shields provided with glass windows. CONSTITUTION:A sputtering treatment device is constituted of a rotating member 3 combined radially with four pieces of cylindrical deposition preventing shields 2 each provided with a glass window 15 in a vacuum chamber 1. A substrate 4 to be sputtered is introduced through a pressure regulation chamber 8A into the part A in the chamber 1, where the substrate is held by a substrate holder 12. Gaseous Ar 10 is introduced from the central part in the chamber 1 and the substrate is subjected to ion cleaning by a reverse sputtering treatment in the position A and thereafter the member 3 is rotated by 90 deg. to the position B where the substrate 4 is subjected to a sputtering treatment. The member 3 is rotated 90 deg. in succession to the position C from which the substrate is removed through a pressure regulation chamber 8B. Since the sputtering treatment is performed by the shields 2 provided with the windows, the continuous sputtering treatment is accomplished without contaminating the inside wall of the chamber 1 while the sputtering condition is monitored. |
