Ion implantation apparatus.

摘要

An ion implantation apparatus comprises a first multipole electrostatic deflector (5) and a second multipole electrostatic deflector (6). The first multipole electrostatic deflector (5) comprises five or more electrodes equally spaced around an optical axis to each of which voltage for offset-deflecting the ion beam (8) at the predetermined angle and voltage for simultaneously sweeping the ion beam (8) in X and Y directions are applied. The second multipole electrostatic deflector (6) is disposed around a second optical axis starting from the center of the first deflector (5) and directed towards a line which makes the predtermined angle with the axis of the first deflector (5) and comprises the same number of electrodes as the first deflector (5) equally spaced around the second optical axis, to each of which voltage for sweeping the ion beam (8) in X and Y directions are applied so that the ion beam (8) is implanted on the target(s) at a constant angle therewith while keeping the direction of incidence of the ion beam (8) parallel with the second optical axis.