| 摘要 |
<p>A dynamic random access memory includes a memory cell array (10), an address supply part (12, 14, 16), a data input/output part (24, 28, 30) and a word line driver (36). The word line driver increases word lines (WLn, WLn+1) to a first voltage (> Vcc, Vcc-Vth) during a first predetermined period after a first timing when the address supply circuit selects one of the word lines for reading out data and a second predetermined period after a second timing when the address supply circuit releases the one of the word lines from a selected state and maintains the one of the word lines at a second voltage (Vcc, Vcc-Vth) less than the first voltage during an interval between the first and second predetermined periods. <IMAGE></p> |
