| 摘要 |
PURPOSE:To prevent deterioration of a diode to be generated by electron rays or X rays, etc., to enhance sensitivity of detection and reliability, and moreover to enable to obtain the broad voltage range enabled to apply a stable reverse voltage, and to realize the high speed and broad dynamic range of a semiconductor detector by a method wherein a thick metal layer of Au, etc., is provided on an insulator layer as to conduct to the diode. CONSTITUTION:The insulator layer 2 is adhered on a semiconductor substrate 1 as to cover the circumference of the diode active region, and after the metal 12 of Al or Mo, etc., is adhered thin (5,000Angstrom , for example) on the insulator layer 2 as to conduct to the diode, the sufficiently thick metal layer 11 (the layer thereof is formed of a multilayer of Ti-Pt-Au having thickness of 1mum or more, for example) is adhered thereon as to cover up to the part corresponding to the upper part of the electric field region generating in an N<-> type semiconductor layer 6 to constitute the diode for the semiconductor detector. |
