| 摘要 |
PURPOSE: To remove a photoresist without damaging the polymer layer of a substrate by using a substrate having a specified structure and removing the finally remaining part of the photoresist with a specified solvent. CONSTITUTION: The top of a substrate with a polymer-metal or polymer- semiconductor laminated layer is coated with a photoresist layer 5, a desired pattern is formed and the layer 5 in the finally remaining part is removed with relatively long chain ether or ketone, >=2C ester, >=4C alcohol or alicyclic ether. For example, an Al vapor deposited layer 2, a P(VDF-TrFE) copolymer layer 3 preferably contg. <=30% TrFE, an Al vapor deposited layer 4 and the photoresist layer 5 are successively formed on an Si wafer 1. Exposure is carried out through a prescribed mask, the layers 5, 4 in the exposed part are successively removed and then the remaining layer 5 is removed with THF. |
