SUBSTITUTED SILICON NITRIDE MATERIAL AND METHOD OF PRODUCTION THEREOF

摘要

Substituted silicon aluminium oxynitrides are made electrically conductive by inclusion of titanium nitride at low levels, eg 15-38 vol%, by inclusion of titanium dioxide and in situ conversion thereof to titanium nitride which is contained in an intergranular phase. Further improvements in conductivity can be achieved by converting the intergranular phase from a glassy state to a crystalline state.