| 摘要 |
<p>PURPOSE:To obtain active matrix substrates in a high yield by covering an auxiliary scanning line made of an Al film with a main scanning line and forming an oxide film on the entire surface of the main scanning line by anodic oxidation. CONSTITUTION:The structure of a scanning line-signal line crossing part is composed of an auxiliary scanning line 2 formed on a substrate 1, a main scanning line 3, an oxide film 11 formed by anodically oxidizing the entire surface of the scanning line 3, a gate insulating film 4, a semiconductor layer 5 and a signal line 6. Since the oxide film 11 is formed by anodically oxidizing the entire region of the scanning line, even when the signal line 6 shifts, the oxide film 11 and the gate insulating film 4 insulate the signal line 6 from the scanning lines and a short circuit is prevented. Since the auxiliary scanning line 2 is made of an Al-based metal film and covered with the main scanning line 3, a short-circuit between the scanning lines and the signal line due to hillocks formation of Al and the increase of the resistance of the scanning lines are prevented. The yield of production of active matrix substrates is enhanced.</p> |
