| 摘要 |
PURPOSE:To balance the electrical characteristics between two data lines although some matching shift occurs, by providing in two divisions a transistor which causes a selective short circuit between the two data lines connected with plural memory cells. CONSTITUTION:A transistor which balances the two data lines is divided into two transistors TRQ1-1 and TRQ1-2 at the outside of the TRQ2 and TRQ3 respectively. The diffusing layers 31 and 33 are used to a source and a drain respectively, and a polycrystal silicon 37 is used to a gate. Thus the TRQ1-1 is provided. Then the diffusing layers 32 and 34 are used to a source and a drain respectively, and a polycrystal silicon 38 is used to a gate. Thus the TRQ1-2 is formed. Each source electrode is connected to the data lines D and D', and the diffusing layers to be turned into the drain electrodes are connected to each other via the polysilicon which forms the gate electrodes of the TRQ2 and TRQ3. |
