| 摘要 |
PURPOSE:To easily smooth the irregularities of a glass film surface comparing when the glass film surface is exposed under oxidizing atmosphere at normal pressure by a method wherein the glass film is exposed under high temperature oxidizing atmosphere under the pressurized condition by previously growing a silicon nitride film under a phosphorus silicic acid glass film. CONSTITUTION:After introducing an N type impurity in a substrate 11 by an ion implantation method, the N type impurity is annealed to form an N type region 15. Next, after forming a silicon nitride film 16 having a film thickness of 500Angstrom by a vapor growth method, a PSG film 17 containing 5% of phosphorus is formed with a film thickness of 1.5mum as a layer insulating film by a vapor growth method. Next, the PSG film 17 is smoothed by applying thermal treatment for 60min under oxygen and hydrogen combustion atmosphere under a pressurized condition of 9kg/cm<2> at 950 deg.C. |
