| 摘要 |
PURPOSE:To easily and reliably fabricate a lateral insulated gate type field effect transistor using a semiconductor substrate having excellent crystal characteristic. CONSTITUTION:A projected area 2 is formed on the first main surface side of a semiconductor base material 1, a first gate 3 of the width (length) smaller than the projected area 2 is formed on the projected area 2, an insulating layer 4 is formed entirely on the semiconductor base material 1 in such a manner as including the first gate 3 and burying it, and such insulating layer is removed, from the second main surface side of the semiconductor base material 1, that is, from the side opposite the side having the projected area 2, until the position (a) where the insulating layer 4 formed in such a manner as burying the projected area 2. A second gate is formed on the surface exposed by the process explained above.
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