发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To perform gettering treatment in an arbitrary element forming process and improve the yield of elements, by keeping the surface of a substrate whereon elements are formed at a low temperature when fusion-diffusing phosphorus by the irradiation of laser light, after a phosphorus glass layer is provided on the back surface. CONSTITUTION:After an N<+> type buried layer 12 is formed, an N type epitaxial layer 13 is formed, and an insulation isolated oxide film 14 is formed by using a P type Si substrate 11, a gettering treatment by this prevention, i.e. a process wherein laser light l is irradiated is performed after providing the phosphorus glass layer on the back surface. Thereafter, a P type base region, an N<+> type emitter region 22 and an N<+> type collector region 23 are formed, and an electrode region 24 is formed resulting in the manufacture of an isoplanar type bipolar transistor having a back surface gettering region 25.
申请公布号 JPS5812331(A) 申请公布日期 1983.01.24
申请号 JP19810111389 申请日期 1981.07.16
申请人 NIPPON DENKI KK 发明人 NUMAZAWA YOUICHIROU
分类号 H01L21/322;(IPC1-7):01L21/322 主分类号 H01L21/322
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