PROTECTIVE LAYER FOR STABILIZING LAYER AND ITS MANUFACTURE

摘要

PURPOSE: To obtain a mechanically and chemically stable and hard protective layer for an electrically active stabilized layer in a semiconductor device by making the protective layer by a thin film made of an amorphous hydrogen- containing carbon (a-C:H). CONSTITUTION: A protective layer is formed by forming a thin film made of an amorphous hydrogen-containing carbon on an electrically active stabilized layer by executing a high-frequency plasma deposition process of a gaseous carbon hydrogen. In this case, a self biasing direct current voltage which can be heterodyne converted to an RF voltage is generated across electrodes. An electrode having a smaller a-Si stabilized semiconductor component to be covered serves as a cathode. A self bias direct current voltage up to about 500V is generated across the electrodes at a high-frequency output density of about 2.2W.cm<2-2> or the cathode surface. An a-C:H layer having the thickness of about 0.2μm is obtained under the conditions. In this manner, a mechanically and chemically stable hard protective layer is obtained.