| 摘要 |
PURPOSE:To stabilize optical characteristics over a long period of time and to allow the production at a low temp. by specifying ratio of the quantity of H taken in the form of an N-H bond into a thin film to the quantity of H taken in the form of an O-H bond therein to >=1 and specifying a refractive index, optical head gap and the absorption peak based on the N-H bond. CONSTITUTION:The thin film is composed of 28.5 to 42.8 atomic % Si, 0 to 67.5 atomic % O, 0.1 to 57.1 atomic % N, and 0.1 to 16.7 atomic % H. Of the Si, O, N, and H, the H is taken into the film in the form of the N-H bond and the O-H bond and H(N-H)/H(O-H) is >=1. The refractive index n of the thin film is in a 1.45<=n<=2.2 range with light of 632.78nm wavelength and the optical band gap Eg is in an 1.8<=Eg<=6.5eV range. The IR absorption spec tra of the thin film has the absorption peek based on the N-H bond at about 3,400cm<-1> wave number and the absorption wave number nu(N-H) is in a 3,330cm<-1=nu(N-H)<=3,400cm<-1> range. The refractive index is changed with good reproducibility in this way and the characteristics are stabilized over a long period of time; in addition, the production at a low temp. is possible. |
