发明名称 WAFER AND WORKING METHOD
摘要 The wafer for forming an integrated circuit of it comprises a circular contour portion, one flat portion for defining a crystal orientation, and connecting portions, disposed between the circular contour portion of the wafer and respective ends of the flat portion. The connecting portions are chamfered in a thickness direction and in a plane parallel to a major surface thereof to form curvilinear contours so as to prevent a chipping of the wafer at the connecting portion during a processing. The wafer is of a single crystal.
申请公布号 KR900006775(B1) 申请公布日期 1990.09.21
申请号 KR19830003214 申请日期 1983.07.14
申请人 HITACHI LTD. 发明人 MAEGIMA KATSSHIKE;KOMORIYA SUSUMU;NISIZUKA HIROSHI;EKASIRA ETSUO
分类号 H01L21/02;B24D5/02;C30B33/00;H01L21/304;H01L23/544;H01L29/06;(IPC1-7):H01L21/304 主分类号 H01L21/02
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