| 摘要 |
PURPOSE:To form a p-type low-resistance ZnSSe film by using a compound whose carrier concentration and resistivity are specific, which is doped with nitrogen and which is expressed by a formula of ZnSxSe1-x. CONSTITUTION:A p-type semiconductor film whose carrier concentration at room temperature is 10<15>cm<-3> or higher, whose resistivity is 100OMEGA.cm or lower, which is doped with nitrogen and which is expressed by a formula of ZnSxSe1-x (where x is a value within a range of 0<=x<1) is used. When a group V raw material is supplied under a condition that a crystal growth speed is prescribed by a supply amount of a group VI raw material, a group V element is substituted in a position of a lattice of a group VI element; this substituted group V element acts as an acceptor. Thereby, it is possible to obtain a p-type low-resistance semiconductor film efficiently. |
