发明名称 INTEGRIERTE HALBLEITERSCHALTUNGSEINRICHTUNG UND BETRIEBSVERFAHREN DAFUER
摘要 A substrate voltage generating circuit is provided on a semiconductor substrate, and the substrate voltage generating circuit generates a voltage to be applied to the semiconductor substrate. A value of the voltage generated by the substrate voltage generating circuit is changed corresponding to a switching of an operational mode of a semiconductor integrated circuit device from a normal mode to a test mode. Thus, operational characteristics of the semiconductor integrated circuit device in a test mode is changed, so that defective products can be detected in a simple short time test.
申请公布号 DE4007187(A1) 申请公布日期 1990.09.20
申请号 DE19904007187 申请日期 1990.03.07
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 TOBITA, YOUICHI, ITAMI, HYOGO, JP
分类号 G01R31/28;G01R31/317;G11C11/401;G11C11/408;G11C29/00;G11C29/12;H01L21/66;H01L21/822;H01L27/04 主分类号 G01R31/28
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