发明名称 |
INTEGRIERTE HALBLEITERSCHALTUNGSEINRICHTUNG UND BETRIEBSVERFAHREN DAFUER |
摘要 |
A substrate voltage generating circuit is provided on a semiconductor substrate, and the substrate voltage generating circuit generates a voltage to be applied to the semiconductor substrate. A value of the voltage generated by the substrate voltage generating circuit is changed corresponding to a switching of an operational mode of a semiconductor integrated circuit device from a normal mode to a test mode. Thus, operational characteristics of the semiconductor integrated circuit device in a test mode is changed, so that defective products can be detected in a simple short time test. |
申请公布号 |
DE4007187(A1) |
申请公布日期 |
1990.09.20 |
申请号 |
DE19904007187 |
申请日期 |
1990.03.07 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
TOBITA, YOUICHI, ITAMI, HYOGO, JP |
分类号 |
G01R31/28;G01R31/317;G11C11/401;G11C11/408;G11C29/00;G11C29/12;H01L21/66;H01L21/822;H01L27/04 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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