| 摘要 |
<p>PURPOSE:To prevent an inner lead from being stripped off and an electrode pad for bonding use from being stripped off by a method wherein the electrode pad, for bonding use, composed of a multilayer wiring structure is filled with a selectively chemical-vapor-deposited conductive film and a difference in level is relaxed. CONSTITUTION:Electrode pads (4, 8), for bonding use, composed of a multilayer wiring structure are formed on a field oxide film 2 and a phosphosilicate glass(PSG) film 3 on a p-type silicon(Si) substrate 1. An opening part in a cover protective film (PSG film + plasma nitride film) 9 which has been formed on the electrode pads (4, 8), for bonding use, composed of the multilayer wiring structure is filled with a conductive film (selective chemical vapor growth tungsten film) 14; an Au bump electrode 12 containing a barrier metal (Ti film 10 and Pd film 11) is formed on the conductive film (selectively chemical-vapor- deposited tungsten film) 14; an inner lead 13 is bonded. Accordingly, it is possible to relax a difference in level of the electrode pads (4, 8), for bonding use, composed of the multilayer wiring structure when the conductive film (selective chemical vapor growth tungsten film) 14 is filled. Thereby, it is possible to prevent the inner lead from being stripped off.</p> |
