| 摘要 |
PURPOSE:To enhance reliability of an electrical connection and to realize a fine connection by a method wherein a semiconductor element is connected electrically via a superelastic body material and the superelastic body material is formed by a vacuum deposition operation or the like. CONSTITUTION:A film of a superelastic body material is formed at a connection part of a semiconductor element 1; a bump structure is formed; its bump 7 is used as a connection point and is pressurized; a connection is obtained. The superelastic body material is a metal whose elastic strain is 0.5% or higher; the connection point is formed of it by a vacuum deposition operation, a sputtering operation or a CVD operation. The superelastic body material is used for a part which is subjected to a thermal strain in the semiconductor element 1; a deformation is repeated in an elastic range even against a repetitive strain. Accordingly, it is possible to obtain the bump structure which follows an external strain flexibly; the superelastic body material can be formed highly accurately as a bump material. Thereby, it is possible to obtain a semiconductor connection of high reliability. |
