| 摘要 |
PURPOSE:To enhance resolution in forming a pattern without sacrificing registering precision and processing capacity by forming a light reflection preventing film having characteristics of low reflectance in the exposure wavelength and high reflectance in the wavelengths of position detection light on a high light reflectance material, and executing a prescribed exposure. CONSTITUTION:Aluminum wiring is patterned by forming a diffusive layer 2 formed on a semiconductor substrate 1 by the selective diffusion of an interlayer insulating layer 3, depositing an aluminum layer 4 onto the layer 2 in 1mm. thickness, heating the substrate 1 to 200 deg.C, again depositing a 30 nm thick silicon thin film 5 as a reflection preventing layer on the layer 4 by sputtering, coating the film 5 with a photoresist, and conducting registering of a prescribed mask, exposure, and development. The resolution of photographic etching of a high reflectance material can be enhanced without sacrificing registering precision and processing capacity by thus forming the silicon film 5. |
