| 摘要 |
PURPOSE:To form a diamond-like thin film on the surface of a substrate to be treated by maintaining a reduced pressure state in a reaction chamber contg. the substrate, introducing a gaseous mixture satisfying the relation of specific ratios of C, O2 and H2 into the chamber and impressing magnetic fields and microwaves from the outside. CONSTITUTION:After the substrate 8 to be treated is fixed to a holding base 6 in the reaction chamber 1, the inside of the reaction chamber 1 is evacuated and reduced in pressure. Gaseous alcoholic hydrocarbon, such as ethanol, metha nol, propyl alcohol, etc., and gaseous H2 are introduced as gaseous raw materials from a gas introducing system 10 into the chamber. The magnetic fields and microwaves are impressed to the gaseous raw materials by an external magnetic field generator 5 and a microwave generator 4 to generate high-density plasma and to form the C generated by cracking of the hydrocarbon as the diamond-like ultra-hard thin film on the surface of the substrate 8. The ratio of H/C is adjusted to 20 to 40, 7 to 15, 3 to 12 in the case of 1/1, 2/1, 3/1 O/C of the gaseous raw material mixture in this case, by which the diamond-like thin carbon film is formed on the substrate 8. |
