发明名称 |
A BUMP ELECTRODE STRUCTURE OF A SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING THE SAME |
摘要 |
A bump electrode structure of a semiconductor device comprises an electrode pad (13) formed of an aluminum alloy, an insulating oxide layer (14) covering only the peripheral edge portion of the electrode pad (13), an under-bump layer (15) formed of an alloy of titanium and tungsten, and a bump electrode (16) formed of gold. The titanium-tungsten alloy functions both as a barrier metal and as a bonding metal. The bump electrode (16) rises substantially straight from the bonding surface of the under-bump layer (15), and its top portion has an area only substantially equal to that of the electrode pad (13). Fine V-shaped grooves (17) are formed on the top surface of the bump electrode (16) by anisotropic etching. Thus, the semiconductor device with fine electrode pad pitches is provided with a high-reliability bump electrode structure which ensures sufficient bonding strength between internal and external electrodes. |
申请公布号 |
EP0316912(A3) |
申请公布日期 |
1990.09.19 |
申请号 |
EP19880119137 |
申请日期 |
1988.11.17 |
申请人 |
CASIO COMPUTER COMPANY LIMITED |
发明人 |
WAKABAYASHI, TAKESHI PAT. DPT. DEV. DIV HAMURA R&D;SUZUKI, AKIRA PAT. DPT. DEV. DIV. HAMURA R&D;YOKOYAMA, SHIGERU PAT. DPT. DEV. DIV. HAMURA R&D |
分类号 |
H01L21/60;H01L23/485 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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