摘要 |
A projection exposure apparatus in which a wafer is illuminated with a light of slit-like shape from a mask and a carriage for supporting the mask and the wafer as a unit is moved in a predetermined direction relative to a projection optical system, including a mirror system, wherein a pattern formed on the mask is printed on the wafer, is disclosed. By adjusting the attitude of the carriage during movement, a projection error of the pattern of the mask, being projected on the wafer, is corrected. Data necessary for adjusting the carriage attitude is obtained by photoelectrically detecting alignment marks of the mask and the wafer. As a feature, a setting device is provided to allow the setting of the number of wafers, of those of a predetermined number, which are to be treated as the subject of data detection. This makes the apparatus to easily meet either of the requirements of higher precision and higher throughput, as desired. Also, the amount of actual change in the attitude of the carriage, with respect to the instruction value based on the data, is preparatorily detected before the pattern printing and is memorized. This assures higher precision correction of the projection error.
|