| 发明名称 |
High voltage integrated circuits |
| 摘要 |
Premature avalanche breakdown resulting from high electric fields produced by metal interconnections crossing underlying high conductivity regions of an integrated circuit is eliminated by selectively providing discontinuities in the high conductivity regions underlying the metal interconnection paths. |
| 申请公布号 |
US4958210(A) |
申请公布日期 |
1990.09.18 |
| 申请号 |
US19890440457 |
申请日期 |
1989.11.20 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KRISHNA, SURINDER;TORRENO, JR., MANUEL L.;ADLER, MICHAEL S. |
| 分类号 |
H01L23/482;H01L29/06;H01L29/417 |
主分类号 |
H01L23/482 |
| 代理机构 |
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| 地址 |
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