| 摘要 |
PURPOSE:To obtain a dimensionally precise nitride film pattern without inflicting damages on a substrate by a method wherein the substrate surface, except where a capacitor is to be built, is covered with such an anti-nitrification film of an SiO2 or Al2O3 and the capacitor forming region is exposed to an N containing atmosphere for nitriding. CONSTITUTION:An SiO2 film 6 is attached to an Si substrate 1 and a capacitor forming region made of a nitride film is removed by etching. The substrate 1 is then exposed to a high temperature, high pressure ammonium atmosphere, which results in a silicon nitride film 2 formed only on the exposed part of the substrate 1. After this, the film 6 is removed, which leaves the substrate 1 provided with a capacitor composed of the film 2. Thus, a nitride film pattern precise in terms of dimension is obtained without inflicting damages upon the substrate. The resultant product is suitable for use with a high performance, high integration dynamic RAM and the like. |
